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HUASHAN ELECTRONIC

HFF7N60 Datasheet Preview

HFF7N60 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Shantou Huashan Electronic Devices Co., Ltd.
HFF7N60
N-Channel Enhancement Mode Field Effect Transistor
General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
Features
7A, 600V(See Note), RDS(on) <1.2@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Maximum RatingsTa=25unless otherwise specified)
TO-220F
1
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150
Tj ——Operating Junction Temperature -------------------------------------------------- 150
VDSS —— Drain-Source Voltage ----------------------------------------------------------600V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)------------------------------------------------------------ 7A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 28A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 48W
Derate Above 25------------------------------------------------------------------------- 0.38W/
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 420mJ
IAR—— Avalanche Current (Note 1) ------------------------------------------------------------------------- 7A
EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 4.8mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------5.5V/ns
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
Max 2.6
Max 62.5
Unit
/W
/W




HUASHAN ELECTRONIC

HFF7N60 Datasheet Preview

HFF7N60 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

Shantou Huashan Electronic Devices Co., Ltd.
HFF7N60
Electrical CharacteristicsTa=25unless otherwise specified)
Symbol
Items
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Min. Typ.
600
IDSS Zero Gate Voltage Drain Current
IGSS Gate – Body Leakage
On Characteristics
VGS(th) Gate Threshold Voltage
2.0
RDS(on) Static Drain-Source On-Resistance
0.91
Dynamic Characteristics and Switching Characteristics
Ciss Input Capacitance
970
Coss Output Capacitance
80
Crss Reverse Transfer Capacitance
17
td(on) Turn - On Delay Time
20
tr Rise Time
55
td(off) Turn - Off Delay Time
90
tf Fall Time
60
Qg Total Gate Charge
40
Qgs Gate–Source Charge
6.5
Qgd Gate–Drain Charge
16.5
Drain-Source Diode Characteristics and Maximum Ratings
IS
Continuous Source–Drain Diode
Forward Current
ISM
Pulsed Drain-Source Diode
Forward Current
VSD
Source–Drain Diode Forward
On–Voltage
Max. Unit
Conditions
1
10
±100
V
μA
μA
nA
ID=250μA ,VGS=0V
VDS =600V, VGS=0V
VDS =480V, VGS=0V,Tj=125
VGS= ±30V , VDS =0V
4.0 V VDS = VGS , ID=250μA
1.2 VGS=10V, ID=3.5A
1260 pF
110
pF
VDS = 25 V, VGS = 0V,
f = 1.0 MHz
22 pF
40 nS
110
180
nS
nS
VDS = 300V, ID=7A,
RG= 25
(Note 4,5)
120 nS
52 nC
nC
VDS=480V, ID=7A,
VGS = 10 V (Note 4,5)
nC
7A
28 A
1.4 V IS=7A,VGS=0
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=15.7mH,IAS=7.0A, VDD=50V, RG=25 ,Starting TJ=25
3. ISD7.0A, di/dt300A/μS,VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse width300μS, Duty Cycle2%
5. Essentially independent of operating temperature typical characteristics


Part Number HFF7N60
Description N-Channel Enhancement Mode Field Effect Transistor
Maker HUASHAN ELECTRONIC
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