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HFF7N60 - N-Channel Enhancement Mode Field Effect Transistor

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

Key Features

  • s.
  • 7A, 600V(See Note), RDS(on).

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Datasheet Details

Part number HFF7N60
Manufacturer HUASHAN ELECTRONIC
File Size 640.25 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HFF7N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shantou Huashan Electronic Devices Co., Ltd. HFF7N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. █ Features • 7A, 600V(See Note), RDS(on) <1.