The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HYG013N03LS1C2
Single N-Channel Enhancement Mode MOSFET
Feature Description
30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available
Pin Description
DDDD
DDDD
SSSG
GSSS
Pin1 PDFN5*6-8L
Applications
Switching Application Power Management for DC/DC Battery Protection
Single N-Channel MOSFET
Ordering and Marking Information
C2
G013N03
XYMXXXXXX
Package Code C2: PDFN5*6-8L
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HYG013N03LS1C2 Datasheet
