Datasheet Details
| Part number | HYG067N07NQ1P |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.56 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 HYG067N07NQ1P Datasheet
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| Part number | HYG067N07NQ1P |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.56 MB |
| Description | N-Channel MOSFET |
| Datasheet |
HYG067N07NQ1P Datasheet
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DS G TO-220FB-3L DS G TO-3PS-3L G DS TO-263-2L Applications Portable equipment and battery powered systems DC-DC Converters Switching application Motor control Ordering and Marking Information P G067N07 XYMXXXXXX B G067N07 XYMXXXXXX PS G067N07 XYMXXXXXX Package Code P :TO-220FB-3L PS :TO-3PS-3L Date Code XYMXXXXXX N-Channel MOSFET B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HYG067N07NQ1P/B/PS Feature 68V/80A RDS(ON)= 6.5mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET.
| Part Number | Description |
|---|---|
| HYG067N07NQ1PS | N-Channel MOSFET |
| HYG067N07NQ1B | N-Channel MOSFET |
| HYG067N07NQ1D | N-Channel Enhancement Mode MOSFET |
| HYG067N07NQ1U | N-Channel Enhancement Mode MOSFET |
| HYG067N07NQ1V | N-Channel Enhancement Mode MOSFET |
| HYG060N08NS1B | N-Channel Enhancement Mode MOSFET |
| HYG060N08NS1D | N-Channel Enhancement Mode MOSFET |
| HYG060N08NS1P | N-Channel Enhancement Mode MOSFET |
| HYG060N08NS1U | N-Channel Enhancement Mode MOSFET |
| HYG060N08NS1V | N-Channel Enhancement Mode MOSFET |