HVV0405-175 transistor equivalent, power transistor.
* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness
* Internal Input Matching
* Excellent Thermal Stabi.
Features
* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness .
The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering h.
Image gallery
Download