HVV0405-175
HVV0405-175 is Power Transistor manufactured by HVVi.
The innovative Semiconductor pany!
HVV0405-175 High Voltage, High Ruggedness
TM UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
Features
- Silicon MOSFET Technology
- Operation from 24V to 50V
- High Power Gain
- Extreme Ruggedness
- Internal Input Matching
- Excellent Thermal Stability
- All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the UHF band including weather and long range radar applications.
MODE
FREQUENCY (MHz)
VDD (V)
IDQ Power GAIN EFFICIENCY IRL
(m A) (W) (d B)
(%) (d B)
Class AB
50 50 175 25
55 20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 300μs and pulse period = 3ms.
DESCRIPTION
The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV0405-175 Demo Kit Part Number: HVV0405-175-EK Available through Richardson Electronics (http://rfwireless.rell./)
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044
ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit .hvvi. © 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS10A 12/11/08...
