HVV0405-175 Overview
The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to...
HVV0405-175 Key Features
- Silicon MOSFET Technology
- Operation from 24V to 50V
- High Power Gain
- Extreme Ruggedness
- Internal Input Matching
- Excellent Thermal Stability
- All Gold Bonding Scheme