Datasheet Details
| Part number | HVV0912-150 |
|---|---|
| Manufacturer | HVVi |
| File Size | 761.42 KB |
| Description | Power Transistor |
| Datasheet | HVV0912-150-HVVi.pdf |
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Overview: The innovative Semiconductor pany! HVV0912-150 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF.
| Part number | HVV0912-150 |
|---|---|
| Manufacturer | HVVi |
| File Size | 761.42 KB |
| Description | Power Transistor |
| Datasheet | HVV0912-150-HVVi.pdf |
|
|
|
The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz.
The high voltage HVVFET™ technology produces over 150W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply.
The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power..
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