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HVV0405-175 Datasheet Power Transistor

Manufacturer: HVVi

Overview: The innovative Semiconductor pany! HVV0405-175 High Voltage, High Ruggedness TM UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar.

Datasheet Details

Part number HVV0405-175
Manufacturer HVVi
File Size 729.48 KB
Description Power Transistor
Datasheet HVV0405-175-HVVi.pdf

General Description

The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz.

The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply.

The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.

Key Features

  • Silicon MOSFET Technology.
  • Operation from 24V to 50V.
  • High Power Gain.
  • Extreme Ruggedness.
  • Internal Input Matching.
  • Excellent Thermal Stability.
  • All Gold Bonding Scheme.

HVV0405-175 Distributor