HVV0405-175 - Power Transistor

General Description

The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz.

Key Features

Silicon MOSFET Technology.
Operation from 24V to 50V.
High Power Gain.
Extreme Ruggedness.
Internal Input Matching.
Excellent Thermal Stability.
All Gold Bonding Scheme.

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HVV0405-175 power transistor by HVVi - Datasheet Preview

Datasheet Details

Part number	HVV0405-175
Manufacturer	HVVi
File Size	729.48 KB
Description	Power Transistor
Datasheet	HVV0405-175 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness TM UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the UHF band including weather and long range radar applications.