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HMN12816D - Non-Volatile SRAM MODULE 2Mbit

Description

The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits.

Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

Features

  • w Access time : 70, 85, 120, 150ns w High-density design : 256KByte Design w Battery internally isolated until power is applied w Industry-standard 40-pin 128K x 16 pinout w Unlimited write cycles w Data retention in the absence of VCC w 10-years minimum data retention in absence of power w Automatic write-protection during power-up/power-down cycles w Data is automatically protected during power loss w Conventional SRAM operation; unlimited write cycles PIN.

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Datasheet Details

Part number HMN12816D
Manufacturer Hanbit
File Size 173.17 KB
Description Non-Volatile SRAM MODULE 2Mbit
Datasheet download datasheet HMN12816D Datasheet

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www.DataSheet4U.com HANBit HMN12816D Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V Part No. HMN12816D GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package HMN12816D devices can be used in place of solutions which build nonvolatile 128Kx16 memory by utilizing a variety of discrete components.
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