HGTG40N60B3 igbt equivalent, ufs series n-channel igbt.
* 70A, 600V at TC = +25 C
* Square Switching SOA Capability
* Typical Fall Time - 160ns at +150oC
* Short Circuit Rating
* Low Conduction Loss
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Desc.
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.
The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lo.
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