HGTG40N60B3 - UFS Series N-Channel IGBT

Harris

General Description

The HGTG40N60B3 is a MOS gated high voltage switching device combining the best

Key Features

70A, 600V at TC = +25 C.
Square Switching SOA Capability.
Typical Fall Time - 160ns at +150oC.
Short Circuit Rating.
Low Conduction Loss o.

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HGTG40N60B3 ufs series n-channel igbt by Harris - Datasheet Preview

Datasheet Details

Part number	HGTG40N60B3
Manufacturer	Harris
File Size	65.35 KB
Description	UFS Series N-Channel IGBT
Datasheet	HGTG40N60B3 Datasheet

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S E M I C O N D U C T O R HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT Package JEDEC STYLE TO-247 E C G PRELIMINARY May 1995 Features • 70A, 600V at TC = +25 C • Square Switching SOA Capability • Typical Fall Time - 160ns at +150oC • Short Circuit Rating • Low Conduction Loss o Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.