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Harris
Harris

IRF140 Datasheet Preview

IRF140 Datasheet

N-Channel Power MOSFETs

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IRF140 pdf
Semiconductor
July 1998
IRF140, IRF141,
IRF142, IRF143
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm,
N-Channel Power MOSFETs
Features
• 28A and 25A, 80V and 100V
• rDS(ON) = 0.077and 0.100
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17421.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF140
TO-204AE
IRF140
IRF141
TO-204AE
IRF141
IRF142
TO-204AE
IRF142
IRF143
TO-204AE
IRF143
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2306.2



Harris
Harris

IRF140 Datasheet Preview

IRF140 Datasheet

N-Channel Power MOSFETs

No Preview Available !

IRF140 pdf
IRF140, IRF141, IRF142, IRF143
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF140
IRF141
IRF142
IRF143
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
Continuous Drain Current. . .
TC = 100oC . . . . . . . . . . . .
........
........
...
...
...
...
.........
.........
ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
Gate To Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
100
28
20
110
±20
150
1.0
80 100 80 V
80 100 80 V
28 25 25 A
20 17 17 A
110 100 100 A
±20 ±20 ±20 V
150 150 150 W
1.0 1.0 1.0 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
100
-55 to 175
300
100
-55 to 175
300
100
-55 to 175
300
100
-55 to 175
300
mJ
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF140, IRF142
BVDSS ID = 250µA, VGS = 0V
(Figure 10)
100 - - V
IRF141, IRF143
80 - - V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF140, IRF141
VGS(TH) VDS = VGS, ID = 250µA
2.0 - 4.0 V
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC
-
-
- 25 µA
- 250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
28 - - A
IRF142, IRF143
25 - - A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF140, IRF141
IGSS VGS = ±20V
rDS(ON) ID = 17A, VGS = 10V
(Figure 8, 9)
- - ±100 nA
- 0.07 0.077
IRF142, IRF143
- 0.09 0.100
Forward Transconductance (Note 2)
gfs VDS > ID(ON) x rDS(ON)MAX, ID = 17A
(Figure 12)
8.7 13
-
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
tD(ON)
tr
tD(OFF)
VDD = 50V, ID 28A, RG = 9.1, RL = 1.7
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
tf
Qg(TOT)
Qgs
VGS = 10V, ID = 28A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
Qgd
-
-
-
-
-
-
-
16 23 ns
27 110 ns
38 60 ns
14 75 ns
38 59 nC
9 - nC
21 - nC
5-2


Part Number IRF140
Description N-Channel Power MOSFETs
Maker Harris
Total Page 7 Pages
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