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HGT1S3N60C3D - UFS Series N-Channel IGBT

This page provides the datasheet information for the HGT1S3N60C3D, a member of the HGTP3N60C3D UFS Series N-Channel IGBT family.

Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best

Features

  • 6A, 600V at TC = 25oC.
  • 600V Switching SOA Capability.
  • Typical Fall Time.
  • . . . . 130ns at TJ = 150oC.
  • Short Circuit Rating.
  • Low Conduction Loss.
  • Hyperfast Anti-Parallel Diode.

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Datasheet preview – HGT1S3N60C3D

Datasheet Details

Part number HGT1S3N60C3D
Manufacturer Harris Corporation
File Size 248.09 KB
Description UFS Series N-Channel IGBT
Datasheet download datasheet HGT1S3N60C3D Datasheet
Additional preview pages of the HGT1S3N60C3D datasheet.

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Full PDF Text Transcription

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S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) www.DataSheet4U.com January 1997 Features • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
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