HGT1S3N60C3DS
features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49119.
Features
- 6A, 600V at TC = 25o C
- 600V Switching SOA Capability
- Typical Fall Time-
- - . 130ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Ordering Information
PART NUMBER HGTP3N60C3D HGT1S3N60C3DS PACKAGE TO-220AB TO-263AB BRAND G3N60C3D G3N60C3D JEDEC TO-263AB
NOTE: When ordering, use the entire part...
