HGT1S3N60A4S
features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49327.
Features
- >100k Hz Operation at 390V, 3A
- 200k Hz Operation at 390V, 2.5A
- 600V Switching SOA Capability
- Typical Fall Time-
- - . . 70ns at TJ = 125o C
- 12m J EAS Capability
- Low Conduction Loss
- Temperature pensating SABER Model .intersil.
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
Ordering Information
PART NUMBER HGTD3N60A4S HGT1S3N60A4S HGTP3N60A4 PACKAGE TO-252AA TO-263AB TO-220AB BRAND 3N60A4
Packaging
JEDEC...
