HGT1S3N60B3DS
features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25o C and 150o C. The diode used in anti-parallel with the IGBT is the RHRD460. The IGBT used is TA49192. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49193.
Features
- 7A, 600V TC = 25o C
- 600V Switching SOA Capability
- Typical Fall Time-
- - . 115ns at TJ = 125o C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount
- ponents to PC Boards
Packaging
JEDEC TO-220AB
E COLLECTOR (FLANGE)
Ordering Information
PART NUMBER...
