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HGTP3N60C3D Datasheet

Manufacturer: Harris Corporation
HGTP3N60C3D datasheet preview

HGTP3N60C3D Details

Part number HGTP3N60C3D
Datasheet HGTP3N60C3D_HarrisCorporation.pdf
File Size 248.09 KB
Manufacturer Harris Corporation
Description UFS Series N-Channel IGBT
HGTP3N60C3D page 2 HGTP3N60C3D page 3

HGTP3N60C3D Overview

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices bining the.

HGTP3N60C3D Key Features

  • 6A, 600V at TC = 25oC
  • 600V Switching SOA Capability
  • Typical Fall Time
  • 130ns at TJ = 150oC
  • Short Circuit Rating
  • Low Conduction Loss
  • Hyperfast Anti-Parallel Diode

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