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Hewlett-Packard
Hewlett-Packard

MSA-0311 Datasheet Preview

MSA-0311 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

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MSA-0311 pdf
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0311
Features
• Cascadable 50 Gain Block
• 3 dB Bandwidth:
DC to 2.3 GHz
• 11.0 dB Typical Gain at
1.0 GHz
• 9.0 dBm Typical P1 dB at
--1.0 GHz
• Unconditionally Stable
(k>1)
• Low Cost Surface Mount
Plastic Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices”.
Description
The MSA-0311 is a low cost silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in the surface mount plastic
SOT-143 package. This MMIC is
designed for use as a general
purpose 50 gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
SOT-143 Package
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 7 V
C block
IN
MSA
RFC (Optional)
C block
Vd = 4.7 V
OUT



Hewlett-Packard
Hewlett-Packard

MSA-0311 Datasheet Preview

MSA-0311 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

MSA-0311 pdf
2
MSA-0311 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
60 mA
Thermal Resistance[2,4]:
θjc = 500°C/W
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
240 mW
+13 dBm
150°C
–65 to 150°C
Electrical Specifications[1], TA = 25°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 2.0 mW/°C for TC > 30°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50
Units Min. Typ. Max.
GP Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
dB 11.5
9.0 11.0
GP Gain Flatness
f = 0.1 to 1.6 GHz dB ±0.7
f3 dB
3 dB Bandwidth
GHz 2.3
VSWR
Input VSWR
Output VSWR
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
1.5:1
1.7:1
NF 50 Noise Figure
f = 1.0 GHz
dB 6.0
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
9.0
IP3 Third Order Intercept Point
f = 1.0 GHz
dBm
22.0
tD
Vd
dV/dT
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 1.0 GHz
TC = 25°C
psec
V
mV/°C
3.8
140
4.7 5.6
–8.0
Notes:
1. The recommended operating current range for this device is 20 to 40 mA. Typical gain performance as a function of
current is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0311-TR1
3000
7" Reel
MSA-0311-BLK
100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.


Part Number MSA-0311
Description Cascadable Silicon Bipolar MMIC Amplifier
Maker Hewlett-Packard
Total Page 4 Pages
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