MSA-1023 Datasheet | Hewlett-Packard

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data Features - High Output Power: +27 d Bm Typical P1d B at 1.0␣ GHz - Low Distortion: 37 d Bm Typical IP3 at 1.0␣ GHz - 8.5 d B Typical Gain at 1.0␣ GHz - Hermetic, Metal/Beryllia Stripline Package - Impedance Matched to 25 Ω for Push-Pull Configurations This MMIC is designed for use in a push-pull configuration in a 25␣ Ω system. The MSA-1023 can also be used as a single-ended amplifier in a 50␣ Ω system with slightly reduced performance. Typical applications include narrow and broadband RF amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 230 mil Be O Flange Package Description The MSA-1023 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, Be O flange package for good thermal characteristics. Typical Push-Pull Biasing Configuration R bias VCC > 20 V RFC C block 1 50 Ω 1 4 C block 3 2 4 3 C block RFC VCC > 20 V R bias Vd = 15 V 50 Ω OUT C block 5965-9554E 6-446...