H9926CTS Datasheet | Hi-Sincerity Mocroelectronics

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a .. wide range of gate drive voltage (2.5V-10V) Q2 Q1 Pin 1: Drain 1 Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain 2 Features - RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A - High Density Cell Design for Ultra Low On-Resistance - High Power and Current Handing Capability - Fully Characterized Avalanche Voltage and Current - Ideal for Li ion Battery Pack Applications H9926CTS Symbol & Pin Assignment 8 7 6 5 Q2 Q1 Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain Applications - Battery Protection - Load Switch - Power Management Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) - 1 Parameter Ratings 20 ±12 6 30 Units V V A A W W °C °C/W Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75o C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient - 2 o 1.5 0.96 -55 to +150 83 - 1: Maximum DC current limited by the package - 2: 1-in2 2oz Cu PCB board H9926TS, H9926CTS HSMC Product Specification HI-SINCERITY...