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Hi-Sincerity Mocroelectronics

H9926CTS Datasheet Preview

H9926CTS Datasheet

Dual N-Channel Enhancement-Mode MOSFET

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H9926TS / H9926CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
www.DataShtreeent4cUh.pcoromcess. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion Battery Pack Applications
8-Lead Plastic TSSOP-8L
Package Code: TS
H9926TS Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain 1
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain 2
H9926CTS Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Applications
Battery Protection
Load Switch
Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
PD
Tj, Tstg
RθJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
Total Power Dissipation @TA=75oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6
30
1.5
0.96
-55 to +150
83
Units
V
V
A
A
W
W
°C
°C/W
H9926TS, H9926CTS
HSMC Product Specification




Hi-Sincerity Mocroelectronics

H9926CTS Datasheet Preview

H9926CTS Datasheet

Dual N-Channel Enhancement-Mode MOSFET

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
www.DataSheet4VUG.cSo(thm)
IDSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
gFS Forward Transconductance
Dynamic
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-off Delay Time
tf Turn-off Fall Time
Drain-Source Diode Characteristics
IS Maximum Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS=0V, ID=250uA
VGS=2.5V, ID=5.2A
VGS=4.5V, ID=6A
VDS=VGS, ID=250uA
VDS=20V, VGS=0V
VGS=±12V, VDS=0V
VDS=10V, ID=6A
VDS=10V, ID=6A, VGS=4.5V
VDS=8V, VGS=0V, f=1MHz
VDD=10V, ID=1A, VGS=4.5V
RGEN=6
VGS=0V, IS=1.7A
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Spec. No. : MOS200513
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
Min. Typ. Max. Unit
20 - - V
- 34 40
m
- 25 30
0.6 - 1.5 V
- - 1 uA
- - ±100 nA
7 13 -
S
- 4.86 -
- 0.92 -
- 1.4 -
- 562 -
- 106 -
- 75 -
- 8.1 -
- 9.95 -
- 21.85 -
- 5.35 -
nC
pF
ns
- - 1.7 A
- - 1.2 V
VGEN
Switching
Test Circuit
VDD
RD
VIN D
VOUT
RG
G
S
td(on)
ton Switching
Waveforms
tr
90%
td(off)
toff
tf
90%
Output, VOUT
10%
Input, VIN
10%
50%
10%
Inverted
90%
50%
Pulse Width
H9926TS, H9926CTS
HSMC Product Specification


Part Number H9926CTS
Description Dual N-Channel Enhancement-Mode MOSFET
Maker Hi-Sincerity Mocroelectronics
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H9926CTS Datasheet PDF






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