H9926S

Manufacturer: Hi-Sincerity Mocroelectronics

H9926S datasheet by Hi-Sincerity Mocroelectronics.

This datasheet includes multiple variants, all published together in a single manufacturer document.

H9926S Datasheet Details

Part number	H9926S
Datasheet	H9926S H9926CS_Hi Datasheet (PDF)
File Size	77.48 KB
Manufacturer	Hi-Sincerity Mocroelectronics
Description	Dual N-Channel Enhancement-Mode MOSFET

H9926S Overview

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a.

H9926S Key Features

RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion Battery Pack

More Datasheets from Hi-Sincerity Mocroelectronics

View all Hi-Sincerity Mocroelectronics datasheets

Part Number	Description
H9926CS	Dual N-Channel Enhancement-Mode MOSFET
H9926CTS	Dual N-Channel Enhancement-Mode MOSFET
H9926TS	Dual N-Channel Enhancement-Mode MOSFET

H9926S Datasheet Details

H9926S Overview

H9926S Key Features

More Datasheets from Hi-Sincerity Mocroelectronics

H9926S Distributor