H9926S
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.
Key Features
- RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
- High Density Cell Design for Ultra Low On-Resistance
- High Power and Current Handing Capability
- Fully Characterized Avalanche Voltage and Current
- Ideal for Li ion Battery Pack Applications
Applications
- Battery Protection
