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HBD675, HBD675_Hi Datasheet - Hi-Sincerity Mocroelectronics

HBD675 NPN EPITAXIAL PLANAR TRANSISTOR

The HBD675 is designed for use as output devices in complementary general purpose amplifier applications. Absolute Maximum Ratings(Ta=25°C) * Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipa.

HBD675_Hi-SincerityMocroelectronics.pdf

This datasheet PDF includes multiple part numbers: HBD675, HBD675_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HBD675, HBD675_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

30.23 KB

Description:

Npn epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: HBD675, HBD675_Hi.
Please refer to the document for exact specifications by model.

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TAGS

HBD675 HBD675_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

HBD675 Distributor