HBD678 Features
* High Current Gain
* Monolithic Constructor Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W
* Maximum Volta
HBD678_Hi-SincerityMocroelectronics.pdf
Datasheet Details
HBD678, HBD678_Hi
Hi-Sincerity Mocroelectronics
22.84 KB
Npn epitaxial planar transistor.
This datasheet PDF includes multiple part numbers: HBD678, HBD678_Hi.
Please refer to the document for exact specifications by model.
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