| Part number | HI649A |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 192.82 KB |
| Description | PNP Transistor |
| Datasheet |
 HI649A Datasheet
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| Note |
This datasheet PDF includes multiple part numbers: HI649A, HI649A_Hi. Please refer to the document for exact specifications by model. |
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The HI649A is designed for low frequency power amplifier. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -180 V BVCEO Collector to Emitter Voltage -160 V BVEBO Emitter to Base Voltage -5 V IC Collector Current -1.5 A Characteristics (Ta=25°C) Symbol BVCBO B
