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HI669A - NPN Transistor

Download the HI669A datasheet PDF. This datasheet also covers the HI669A_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HI669A is designed for low frequency power amplifier.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1 W Maximum Voltages

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HI669A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI669A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 191.95 KB
Description NPN Transistor
Datasheet download datasheet HI669A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2002.09.16 Page No. : 1/3 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................... 1 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage....