HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 2/4
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
www.DataSheet4UIG.ScSoRm
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=400V, VGS=0V)
Drain-Source Leakage Current (VDS=320V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=3.3A)(*4)
Forward Transconductance (VDS=50V, ID=3.3A)(*4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=200V, ID=3.5A, RG=12Ω,
RD=57Ω)(*4)
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=320V, ID=3.5A, VGS=10V)
(*4)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Characteristic
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
trr Reverse Recovery Time
VSD Diode Forward Voltage
**: Negligible, Dominated by circuit inductance
IF=3.5A, di/dt=100A/us, Tj=25°C
(*4)
IS=5.5A, VGS=0V, Tj=25°C (*4)
Min. Typ. Max. Unit
400 - - V
- - 1 uA
50 uA
- - 100 nA
- - -100 nA
2 - 4V
- - 1Ω
2.9 - - S
- 700 -
- 170 - pF
- 64 -
- 10 -
- 15 -
ns
- 38 -
- 14 -
- - 38
- - 5.7 nC
- - 22
- 4.5 - nH
- 7.5 - nH
Min. Typ. Max. Units
- 1.8 2.2 uC
- ** -
- 270 530 ns
- - 1.6 V
HIRF730, HIRF730F
HSMC Product Specification
