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HIRF840F - N-Channel Power MOSFET

Download the HIRF840F datasheet PDF. This datasheet also covers the HIRF840_Hi variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

Key Features

  • Dynamic dv/dt Rating.
  • Repetitive Avalanche Rated.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Value TO-220AB 1.71 TO-220FP 3.3 62 Units °C/W °C/W HIRF840 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 123 3-Lead Plastic T.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HIRF840_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HIRF840F
Manufacturer Hi-Sincerity Mocroelectronics
File Size 47.13 KB
Description N-Channel Power MOSFET
Datasheet download datasheet HIRF840F Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HIRF840 N-Channel Power MOSFET
HIRF830 N-CHANNEL POWER MOSFET
HIRF830F N-CHANNEL POWER MOSFET
HIRF630 N-Channel MOSFET
HIRF730 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 1/4 HIRF840 / HIRF840F N-CHANNEL POWER MOSFET Description This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. Features • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Value TO-220AB 1.71 TO-220FP 3.