HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200505
Issued Date : 2005.06.01
Revised Date : 2005.06.08
Page No. : 2/4
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient (Reference to 25oC, ID=1mA)
IDSS
Drain-Source Leakage Current (VDS=500V, VGS=0V)
Drain-Source Leakage Current (VDS=400V, VGS=0V, Tj=125°C)
IGSSF
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
IGSSR
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
VGS(th)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=4.8A)(*4)
gFS Forward Transconductance (VDS=50V, ID=4.8A)(*4)
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
(VDD=250V, ID=8A, RG=9.1Ω,
RD=31Ω)(*4)
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(VDS=400V, ID=8A, VGS=10V)
(*4)
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Min. Typ. Max. Unit
500 - - V
- 0.78 - V/oC
- - 25 uA
250 uA
- - 100 nA
- - -100 nA
2 - 4V
- - 0.85 Ω
4.9 - - S
- 1300 -
- 310 - pF
- 120 -
- 14 -
- 23 -
ns
- 49 -
- 20 -
- - 63
- - 9.3 nC
- - 32
- 4.5 - nH
- 7.5 - nH
Source-Drain Diode
Symbol
Characteristic
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
trr Reverse Recovery Time
VSD Diode Forward Voltage
**: Negligible, Dominated by circuit inductance
IF=8A, di/dt=100A/us, Tj=25°C (*4)
IS=8A, VGS=0V, Tj=25°C (*4)
Min.
-
-
-
-
Typ. Max. Units
4.2 8.9 uC
** -
460 970 ns
- 2V
HIRF840, HIRF840F
HSMC Product Specification
