HSD965 Datasheet - Hi-Sincerity Mocroelectronics

NPN Transistor

HSD965 General Description

The HSD965 is suited for use as AF output amplifier and flash unit. Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW * Maximum.

HSD965 Datasheet (47.56 KB)

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HSD965

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Hi-Sincerity Mocroelectronics

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47.56 KB

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Npn transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page.

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HSD965 NPN Transistor Hi-Sincerity Mocroelectronics

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HSD965 General Description

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