* Low on-resistance R DS(on) = 25 mΩ typ.
* 4V gate drive devices.
* High speed switching Outline TO
  –220CFM D G 1 2 3 S 1. Gate 2. Drain.

P-Channel MOSFET

2SJ472-01L

2SJ472-01S

2SJ473-01L

2SJ473-01S

2SJ474-01L

2SJ474-01S

2SJ475-01

2SJ476-01L

2SJ476-01S

2SJ477-01MR

2SJ479

2SJ479L

2SJ479S

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