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2SJ293 - Silicon P-Channel MOSFET

Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source.
  • Suitable for switching regulator, DC-DC converter.
  • Avalanche ratings Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ293 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current A.

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Datasheet Details

Part number 2SJ293
Manufacturer Hitachi
File Size 29.46 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet 2SJ293 Datasheet
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Full PDF Text Transcription

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2SJ293 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ293 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ² 10 µs, duty cycle ² 1% 2. Value at TC = 25°C 3.
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