2SK1918
2SK1918 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance
- High speed switching
- Low drive current
- 4 V gate drive device can be driven from 5 V source
- Suitable for Switching regulator, DC
- DC converter
- Avalanche ratings
Outline
LDPAK
123 D
12 3
1. Gate 2. Drain 3. Source 4. Drain
November 1996
2SK1918(L), 2SK1918(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤1 %
2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω
Symbol
VDSS VGSS ID I
- 1
D(pulse)
IDR IAP- 3 EAR- 3 Pch- 2
Tch
Tstg
Ratings 60 ±20 25 100 25 25 53 50 150
- 55 to +150
Unit V V A A A A m J W °C °C
2SK1918(L), 2SK1918(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
Gate to source breakdown...
