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2SK1918 Silicon N-Channel MOSFET

2SK1918 Description

2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching .

2SK1918 Features

* Low on-resistance
* High speed switching
* Low drive current
* 4 V gate drive device can be driven from 5 V source
* Suitable for Switching regulator, DC - DC converter
* Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. S

2SK1918 Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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Datasheet Details

Part number
2SK1918
Manufacturer
Hitachi
File Size
28.09 KB
Datasheet
2SK1918-Hitachi.pdf
Description
Silicon N-Channel MOSFET

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