Datasheet Summary
2SK1918(L), 2SK1918(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
- Low on-resistance
- High speed switching
- Low drive current
- 4 V gate drive device can be driven from 5 V source
- Suitable for Switching regulator, DC
- DC converter
- Avalanche ratings
Outline
LDPAK
123 D
12 3
1. Gate 2. Drain 3. Source 4. Drain
November 1996
2SK1918(L),...