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2SK1918S - Silicon N-Channel MOSFET

Download the 2SK1918S datasheet PDF. This datasheet also covers the 2SK1918 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source.
  • Suitable for Switching regulator, DC - DC converter.
  • Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK1918(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode re.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK1918-Hitachi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1913 N-Channel MOSFET Transistor Inchange Semiconductor
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2SK1916-01 N-CHANNEL SILICON POWER MOS-FET Fuji Electric
2SK1916-01R N-CHANNEL SILICON POWER MOS-FET Fuji Electric
2SK1917 N-CHANNEL SILICON POWER MOSFET Fuji Electric

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK1918 Silicon N-Channel MOSFET
2SK1918L Silicon N-Channel MOSFET
2SK197 Silicon N-Channel FET
2SK1572 Silicon N-Channel MOSFET
2SK1618L Silicon N-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter • Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK1918(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤1 % 2. Value at Tc = 25 °C 3.