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2SK1918 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source.
  • Suitable for Switching regulator, DC - DC converter.
  • Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK1918(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode re.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK1918L Silicon N-Channel MOSFET
2SK1918S Silicon N-Channel MOSFET
2SK197 Silicon N-Channel FET
2SK1572 Silicon N-Channel MOSFET
2SK1618L Silicon N-Channel MOS FET

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2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter • Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK1918(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤1 % 2. Value at Tc = 25 °C 3.