BB101M Description
BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st.
BB101M Key Features
- Build in Biasing Circuit; To reduce using parts cost & PC board space
- Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
- Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions