BB101M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi

Datasheet Details

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz).
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB101M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Cha.

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