• Part: BB102M
  • Description: Build in Biasing Circuit MOS FET IC UHF RF Amplifier
  • Manufacturer: Hitachi Semiconductor
  • Size: 64.54 KB
Download BB102M Datasheet PDF
Hitachi Semiconductor
BB102M
BB102M is Build in Biasing Circuit MOS FET IC UHF RF Amplifier manufactured by Hitachi Semiconductor.
Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features - Build in Biasing Circuit; To reduce using parts cost & PC board space. - Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) - Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. - Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain - Note 1 Marking is “BW- ”. - Note 2 BB302M is individual type number of HITACHI...