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BB102M Datasheet Build In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st.

BB102M datasheet preview

Datasheet Details

Part number	BB102M
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	64.54 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB102M_HitachiSemiconductor.pdf

Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz).
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain.
Note 1 Marking is “BW.
”.
Note 2 BB302M is individual type number of.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
BB102C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB101C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB101M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier

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