Datasheet4U Logo Datasheet4U.com

BB102M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain.
  • Note 1 Marking is “BW.
  • ”.
  • Note 2 BB302M is individual type number of.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BB105 Silicon Planar Signal Diodes Iskra Semic
BB105A (BB105A/B/G) Diodes Tele Fun Ken
BB105B (BB105A/B/G) Diodes Tele Fun Ken
BB105G (BB105A/B/G) Diodes Tele Fun Ken
BB109 (BB10x) Varactor Diode ETC

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain • Note 1 Marking is “BW–”. • Note 2 BB302M is individual type number of HITACHI BBFET.