BB102M Description
BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st.
BB102M Key Features
- Build in Biasing Circuit; To reduce using parts cost & PC board space
- Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)
- Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions
- Provide mini mold packages; MPAK-4(SOT-143mod)
- Note 1 Marking is “BW-”
- Note 2 BB302M is individual type number of HITACHI BBFET