BB102M
Overview
- Build in Biasing Circuit; To reduce using parts cost & PC board space.
- Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)
- Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
- Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4
- Source
- Gate1
- Gate2
- Drain
- Note 1 Marking is “BW-”.
- Note 2 BB302M is individual type number of HITACHI BBFET. BB102M
