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BB101M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB101M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Cha.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Full PDF Text Transcription (Reference)

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BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4.