Part BB101M
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Manufacturer Hitachi Semiconductor
Size 48.11 KB
Hitachi Semiconductor
BB101M

Overview

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4
  • Source
  • Gate1
  • Gate2
  • Drain BB101M