BB101M Datasheet Build In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st.

Datasheet Details

Part number	BB101M
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	48.11 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB101M_HitachiSemiconductor.pdf

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz).
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB101M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Cha.

Part Number	Description
BB101C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB102C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB102M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier