Hitachi BB101M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
| Part No. | BB101M |
|---|---|
| Datasheet | BB101M Download |
| Manufacturer |  Hitachi |
| Description | Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
| Buy | Stock & Price |
FEATURES
● Build in Biasing Circuit; To reduce using parts cost & PC board space.● Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
● Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB101M
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 ±6 25 150 150 –55 to +150 Unit V V V mA mW °C °C 2 BB101MELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 ±6 — — 0.2 0.4 10 16 Typ — — — — — — — 15 22 Max — — — +100 ±100 0.8 1.0 20 — Unit V V V nA nA V V mA mS Test conditions I D = 200 µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0...
