Hitachi BB102C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
| Part No. | BB102C |
|---|---|
| Datasheet | BB102C Download |
| Manufacturer |  Hitachi |
| Description | Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
| Buy | Stock & Price |
FEATURES
● Build in Biasing Circuit; To reduce using parts cost & PC board space.● Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)
● Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
● Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain
● Note 1 Marking is “BW–”.
● Note 2 BB302C is individual type number of HITACHI BBFET. BB102C
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 ±10 25 100 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol Min V(BR)DSS V(BR)G1SS V(BR)G2SS 12 +10 ±10 — — 0.1 0.5 10 16 1.2 0.7 — 16 — Typ — — — — — — —...
