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BB102C - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain.
  • Note 1 Marking is “BW.
  • ”.
  • Note 2 BB302C is individual type number of.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

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BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain • Note 1 Marking is “BW–”. • Note 2 BB302C is individual type number of HITACHI BBFET.