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H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features
• • • • •
Low on-resistance: R DS(on) = 2.5 typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanche ratings
Outline
TO-220FM
w
w
.D w
G
t a
D S
S a
e h
3
t e
U 4
.c
m o
1 2
1. Gate 2. Drain 3. Source
w
w
w
.D
a
S a t
e e h
U 4 t
m o .
H5N5006FM Datasheet
