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H5N5006FM - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance: R DS (on) = 2.5 Ω typ.
  • Low leakage current: IDSS = 1 µA max (at VDS = 500 V).
  • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A).
  • Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A).
  • Avalanche ratings Outline.

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Datasheet Details

Part number H5N5006FM
Manufacturer Renesas
File Size 77.05 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet H5N5006FM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H5N5006FM Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: R DS (on) = 2.5 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) • Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) • Avalanche ratings Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 123 G S REJ03G1114-0200 (Previous: ADE-208-1112) Rev.2.00 Sep 07, 2005 1. Gate 2. Drain 3. Source Rev.2.