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H5N5006FM Datasheet Silicon N-channel MOSFET

Manufacturer: Renesas

Overview: H5N5006FM Silicon N Channel MOS FET High Speed Power Switching.

H5N5006FM datasheet preview

Datasheet Details

Part number	H5N5006FM
Manufacturer	Renesas
File Size	77.05 KB
Description	Silicon N-Channel MOSFET
Datasheet	H5N5006FM-Renesas.pdf

Key Features

Low on-resistance: R DS (on) = 2.5 Ω typ.
Low leakage current: IDSS = 1 µA max (at VDS = 500 V).
High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A).
Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A).
Avalanche ratings Outline.

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