H5N5006FM
H5N5006FM is Silicon N-Channel MOSFET manufactured by Renesas.
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance: R DS (on) = 2.5 Ω typ.
- Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
- High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)
- Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)
- Avalanche ratings
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
REJ03G1114-0200 (Previous: ADE-208-1112)
Rev.2.00 Sep 07, 2005
1. Gate 2. Drain 3. Source
Rev.2.00 Sep 07, 2005 page 1 of...
