H5N5006FM Description
H5N5006FM Silicon N Channel MOS FET High Speed Power Switching.
H5N5006FM Key Features
- Low on-resistance: R DS (on) = 2.5 Ω typ
- Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
- High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)
- Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)
- Avalanche ratings