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H5N5006FM - Silicon N-Channel MOSFET

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Hitachi

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H5N5006FM Silicon N-Channel MOSFET by Hitachi - Datasheet Preview — Datasheet preview – H5N5006FM

Datasheet Details

Part number	H5N5006FM
Manufacturer	Hitachi
File Size	75.57 KB
Description	Silicon N-Channel MOSFET
Datasheet	H5N5006FM Datasheet
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Features

Low on-resistance: R DS(on) = 2.5 typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanche ratings Outline TO-220FM w w . D w G t a D S S a e h 3 t e U 4 . c m o 1 2 1. Gate 2. Drain 3. Source w w w . D a S a t e e h U 4 t m o . c H5N5006FM Absolute Maximum Ratings (Ta.

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Published: Mar 13, 2006 |