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H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1549 (Z)
Features
• Low on-resistance • Low leakage current • High speed switching • Low gate charge • Avalanche ratings
Outline
LDPAK
G
w
w
w
a .D
D S
S ta
1 2 3
e h
1 2
U 4 t e
4 4
.c
m o
Rev.0 Aug.2002
4
3
1
2
H5N5006LS
3
H5N5006LD
H5N5006LM 1. Gate 2. Drain 3. Source 4. Drain
w
w
w
.D
at
h S a
t e e
4U
.
m o c
H5N5006LD, H5N5006LS, H5N5006LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
H5N5006LD Datasheet
