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H5N5006LM - (H5N5006xx) Silicon N-Channel MOSFET

Download the H5N5006LM datasheet PDF. This datasheet also covers the H5N5006LD variant, as both devices belong to the same (h5n5006xx) silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching.
  • Low gate charge.
  • Avalanche ratings Outline LDPAK G w w w a . D D S S ta 1 2 3 e h 1 2 U 4 t e 4 4 . c m o Rev.0 Aug.2002 4 3 1 2 H5N5006LS 3 H5N5006LD H5N5006LM 1. Gate 2. Drain 3. Source 4. Drain w w w . D at h S a t e e 4U . m o c H5N5006LD, H5N5006LS, H5N5006LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain curr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H5N5006LD_Hitachi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Avalanche ratings Outline LDPAK G w w w a .D D S S ta 1 2 3 e h 1 2 U 4 t e 4 4 .c m o Rev.0 Aug.2002 4 3 1 2 H5N5006LS 3 H5N5006LD H5N5006LM 1. Gate 2. Drain 3. Source 4. Drain w w w .D at h S a t e e 4U . m o c H5N5006LD, H5N5006LS, H5N5006LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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