The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HAT3010R
Silicon N/P Channel Power MOS FET High Speed Power Switching
ADE-208-1402F (Z) 7th. Edition Feb. 2002 Features
• Low on-resistance • Capable of 4.5 V gate drive • High density mounting
Outline
SOP-8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
Nch
Pch
www.DataSheet4U.com
www.DataSheet4U.com
HAT3010R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse) IDR Pch Pch Tch Tstg
Note2 Note3 Note1
Unit Pch –60 ±20 –5 –40 –5 2 3 150 –55 to +150 V V A A A W W °C °C
60 ±20 6 48 6 2 3 150 –55 to +150
Notes: 1.
HAT3010R Datasheet
