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Hitachi Power Semiconductor Device Electronic Components Datasheet

HL6339G Datasheet

(HL6342G) 633nm Lasing Laser Diode

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HL6339G pdf
HL6339G/42G
633nm Lasing Laser Diode
ADE-208-1434A (Z)
Rev.1
Apr. 2002
Description
The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure.
Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as
light sources for laser levelers, laser scanners and optical equipment for measurement.
Application
Measurement
Laser analysis systems
Laser scanner
Features
Optical output power : 5 mW (CW)
Visible light output : 633 nm Typ (nearly equal to He-Ne gas laser)
Low operating current : 55 mA Typ
Low operating voltage : 2.3 V Typ
TM mode oscillation
Package Type
HL6339G/42G: G2
Internal Circuit
HL6339G
13
Internal Circuit
HL6342G
13
PD LD PD LD
22


Hitachi Power Semiconductor Device Electronic Components Datasheet

HL6339G Datasheet

(HL6342G) 633nm Lasing Laser Diode

No Preview Available !

HL6339G pdf
HL6339G/42G
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Value
5
2
30
–10 to +40
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Optical output power
Threshold current
Operating current
Operating voltage
Slope efficiency
Lasing wavelength
Beam divergence
parallel to the junction
Beam divergence
parpendicular to the junction
Monitor current
Symbol
PO
Ith
I
OP
VOP
ηs
λp
θ//
θ⊥
I
S
Min
5
0.40
630
6
25
0.04
Typ
45
55
2.3
0.65
633
8
30
0.08
Max
60
70
2.7
0.90
635
11
35
0.14
Unit
mW
mA
mA
V
mW/mA
nm
deg.
Test Condition
Kink free
P = 5 mW
O
PO = 5 mW
3 (mW) / (I(4mW) – I )(1mW)
PO = 5 mW
P = 5 mW
O
deg.
PO = 5 mW
mA P = 5 mW, V = 5 V
O R(PD)
Rev.1, Apr. 2002, page 2 of 8


Part Number HL6339G
Description (HL6342G) 633nm Lasing Laser Diode
Maker Hitachi
Total Page 8 Pages
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