• Part: HVM11
  • Description: Variable Capacitance Diode
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 136.78 KB
Download HVM11 Datasheet PDF
Hitachi Semiconductor
HVM11
HVM11 is Variable Capacitance Diode manufactured by Hitachi Semiconductor.
Features Pin Arrangement - Low capacitance, high S/N. - MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVM11 Laser Mark T4 Package Code MPAK (Top View) 1 NC 2 Anode 3 Cathode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 35 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1 C30 n rs Min 35 - 3.6 0.5 4.0 - Typ - - - - - - Max Unit Test Condition - V IR = 10 µA 50 n A VR = 30 V 5.6 p F VR = 1 V , f = 1 MHz 0.9 VR = 30 V , f = 1 MHz - - C1/C30 1.5 Ω VR = 2 V , f = 100 MHz 10 -9 10-10 10 f=1MHz Reverse current IR (A) Capacitance C (p F) 10-11 10-12 10-13 0 10 20 30 40 Reverse voltage VR...