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Hitachi Power Semiconductor Device Electronic Components Datasheet

HVM11 Datasheet

Variable Capacitance Diode

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ADE-208-081A(Z)
HVM11
Variable Capacitance Diode
for BS/CS tuner
Preliminary
Rev. 1
May. 1993
Features
Pin Arrangement
• Low capacitance, high S/N.
• MPAK package is suitable for high density
surface mounting and high speed assembly.
3
Ordering Information
Type No.
HVM11
Laser Mark
T4
Package Code
MPAK
21
(Top View) 1 NC
2 Anode
3 Cathode
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Junction temperature
Storage temperature
Symbol
VR
Tj
Tstg
Value
35
125
-55 to +125
Unit
V
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Symbol
VR
IR
C1
C30
n
rs
Min
35
3.6
0.5
4.0
Typ
Max Unit Test Condition
— V IR = 10 µA
50 nA VR = 30 V
5.6 pF VR = 1 V , f = 1 MHz
0.9 VR = 30 V , f = 1 MHz
— — C1/C30
1.5 VR = 2 V , f = 100 MHz


Hitachi Power Semiconductor Device Electronic Components Datasheet

HVM11 Datasheet

Variable Capacitance Diode

No Preview Available !

HVM11
10 -9
10-10
10
f=1MHz
10-11
10-12
1.0
10-13
0
10 20 30 40
Reverse voltage VR (V)
Fig.1 Reverse current Vs.
Reverse voltage
50
10-1
1.0
10
Reverse voltage VR (V)
Fig.2 Capacitance Vs.
Reverse voltage
40
Package Dimensions
Laser Mark
0.4
+
0.10
0.05
3
T4
21
0.95 0.95
1.9
2.8
+
0.3
0.1
Unit: mm
0.16
+
0.10
0.06
0 – 0.10
1 NC
2 Anode
3 Cathode
HITACHI Code MPAK(1)
JEDEC Code —
EIAJ Code
SC-59A
Weight (g)
0.011


Part Number HVM11
Description Variable Capacitance Diode
Maker Hitachi
Total Page 2 Pages
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