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Hitachi Power Semiconductor Device Electronic Components Datasheet

1SS108 Datasheet

Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

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1SS108
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
Features
Detection efficiency is very good.
Small temperature coefficient.
High reliability with glass seal.
Ordering Information
Type No.
1SS108
Cathode
White
2nd band
Black
Outline
ADE-208-154A (Z)
Rev. 1
Mark
H
Package Code
DO-35
12
2nd band
Cathode band
1. Cathode
2. Anode


Hitachi Power Semiconductor Device Electronic Components Datasheet

1SS108 Datasheet

Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

No Preview Available !

1SS108
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
VR
IO
Tj
Tstg
Value
30
15
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward current
Reverse current
Capacitance
Rectifier efficiency
IF
IR
C
η
3.0 —
——
——
70 —
— mA VF = 1V
100 µA
VR = 10V
3.0 pF VR = 1V, f = 1MHz
— % Vin = 2Vrms, f = 40MHz, RL = 5k, CL
= 20pF
ESD-Capability
70 — — V
*C = 200pF, Both forward and
reverse direction 1 pulse.
Note: Failure criterion; IR 200µA at VR = 10V
10–1
10–2
10–3
10–4
10–5
10–6
0
0.4 0.8 1.2 1.6
Forward voltage VF (V)
2.0
Fig.1 Forward current Vs. Forward voltage


Part Number 1SS108
Description Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
Maker Hitachi Semiconductor
Total Page 5 Pages
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