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2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3
1
2 3
2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID
1
Ratings 120 120 7 10 15 50 150 –55 to +150 10
Unit V V V A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 120 7 — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 8.0 Max — — 100 10 2000 1.5 3.0 2.0 3.5 3.
2SD1126 Datasheet
