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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD1163A Datasheet

NPN TRANSISTOR

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2SD1163, 2SD1163A
Silicon NPN Triple Diffused
Application
TV horizontal deflection output
Outline
TO-220AB
1
23
1. Base
2. Collector
(Flange)
3. Emitter


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SD1163A Datasheet

NPN TRANSISTOR

No Preview Available !

2SD1163, 2SD1163A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
IC (surge)
PC * 1
Tj
Tstg
Rating
2SD1163
300
120
6
7
10
20
40
150
–55 to +150
2SD1163A
350
150
6
7
10
20
40
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector cutoff current ICBO
Collector to emitter
breakdown voltage
V(BR)CEO
Emitter to base
breakdown voltage
V(BR)EBO
DC current transfer ratio hFE
Collector to emitter
saturation voltage
VCE (sat)
Base to emitter
saturation voltage
VBE (sat)
Fall time
tf
Note: 1. Pulse test.
2SD1163
Min Typ
——
——
120 —
6—
25 —
——
——
——
Max
5
2.0
1.2
0.5
2SD1163A
Min Typ
——
——
150 —
6—
25 —
——
——
——
Max
5
1.0
1.2
0.5
Unit
mA
mA
V
V
V
V
µs
Test conditions
VCB = 300 V, IE = 0
VCB = 350 V, IE = 0
IC = 10 mA, RBE =
IE = 10 mA, IC = 0
VCE = 5 V, IC = 5 A*1
IC = 5 A, IB = 0.5 A*1
IC = 5 A, IB = 0.5 A*1
ICP = 3.5 A,
IB1 = 0.45 A
2


Part Number 2SD1163A
Description NPN TRANSISTOR
Maker Hitachi Semiconductor
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2SD1163A Datasheet PDF






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