2SD1163 datasheet by Inchange Semiconductor.
| Part number | 2SD1163 |
|---|---|
| Datasheet | 2SD1163-INCHANGE.pdf |
| File Size | 208.44 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1163 | NPN TRANSISTOR | Hitachi Semiconductor |
 |
2SD1163 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD1163 | Silicon NPN Transistor | Renesas |
 |
2SD1163 | NPN Silicon Epitaxial Power Transistor | Thinki Semiconductor |
|
2SD1163A | NPN TRANSISTOR | Hitachi Semiconductor |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1163A | NPN Transistor |
| 2SD1168 | NPN Transistor |
| 2SD111 | Silicon NPN Power Transistor |
| 2SD1110 | NPN Transistor |
| 2SD1114 | NPN Transistor |
| 2SD1115 | NPN Transistor |
| 2SD1124 | NPN Transistor |
| 2SD1128 | NPN Transistor |
| 2SD113 | NPN Transistor |
| 2SD1133 | NPN Transistor |
