2SD1163 Datasheet and Specifications PDF

The 2SD1163 is a Silicon NPN Transistor.

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Part Number2SD1163 Datasheet
ManufacturerRenesas
Overview To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric . ee Datasheet Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semi.
Part Number2SD1163 Datasheet
DescriptionNPN TRANSISTOR
ManufacturerHitachi Semiconductor
Overview 2SD1163, 2SD1163A Silicon NPN Triple Diffused Application TV horizontal deflection output Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratin. V Test conditions VCB = 300 V, IE = 0 VCB = 350 V, IE = 0 I C = 10 mA, RBE = ∞ I E = 10 mA, IC = 0 VCE = 5 V, IC = 5 A*1 I C = 5 A, IB = 0.5 A*1 I C = 5 A, IB = 0.5 A*1 I CP = 3.5 A, I B1 = 0.45 A DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation volta.
Part Number2SD1163 Datasheet
DescriptionNPN Silicon Epitaxial Power Transistor
ManufacturerThinki Semiconductor
Overview 2SD1163/2SD1163A ® Pb Free Plating Product 2SD1163/2SD1163A Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Applications * Low collector saturation voltage TV . * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 15.70±0.20 2.80±0.20 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 6.50±0.20 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2.
Part Number2SD1163 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum rati. IC=5A, IB=0.5A 2SD1163A IC=5A, IB=0.5A VCB=300V;IE=0 VCB=350V;IE=0 IC=5A ; VCE=5V 25 1.0 1.2 5 5 V mA mA V V CONDITIONS MIN 120 V TYP MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage V(BR)EBO Emitter-base breakdown voltage 2SD1163 VCEsat Collector-emitter saturation voltage VBEsa.