Thinki Semiconductor 2SD1163
NPN Silicon Epitaxial Power Transistor
| Part No. | 2SD1163 |
|---|---|
| Datasheet | 2SD1163 Download |
| Manufacturer |  Thinki Semiconductor |
| Description | NPN Silicon Epitaxial Power Transistor |
| Buy | Stock & Price |
FEATURES
: * Medium Power Linear SwitchingAPPLICATIONS
* Low collector saturation voltage TV horizontal deflection output 15.70±0.20 2.80±0.20 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 6.50±0.20 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters TO-220C Package Dimension Absolute maximum ratings (Ta=25¡æ ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector current-surge Collector power dissipation Junction temperature Storage temperature TC=25¡æ Open collector Open base 150 6 7 10 20 40 150 -55~150 ¡æ ¡æ V A A A W Open emitter 350 120 V CONDITIONS VALUE 300 V UNIT 3.02±0.20 1.27±0.20 1.52±0.20 2.40±0.20 Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. Free Datasheet 2SD1163/2SD1163A ® CHARACTERISTICS Tj=25¡æ unless otherwise spe...