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2SD1163A Datasheet

NPN Transistor

Manufacturer: Inchange Semiconductor

2SD1163A Overview

IC= 7A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage...

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